Simulation of MOSFETs BJTs and JFETs
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Produktnummer:
9783847323457
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
| Autor: | Yang, Xuan Schroder, Dieter K. |
|---|---|
| EAN: | 9783847323457 |
| Sprache: | Englisch |
| Seitenzahl: | 100 |
| Produktart: | kartoniert, broschiert |
| Verlag: | LAP Lambert Academic Publishing |
| Untertitel: | at and near the Pinch-off Region |
| Schlagworte: | MOSFET (MOS-Feldeffekt-Transistor) |
