Subthreshold Surface Potential Model for Short-Channel Mosfet
41,50 €*
Sofort verfügbar, Lieferzeit: 1-3 Tage
Produktnummer:
9783659126093
As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.
| Autor: | Sarkar, Angsuman |
|---|---|
| EAN: | 9783659126093 |
| Sprache: | Englisch |
| Seitenzahl: | 84 |
| Produktart: | kartoniert, broschiert |
| Verlag: | LAP Lambert Academic Publishing |
| Untertitel: | Using Pseudo 2d Analysis |
| Schlagworte: | MOSFET (MOS-Feldeffekt-Transistor) VLSI |
| Größe: | 150 × 220 |
