Investigation on Schottky-Barrier MOSFETs for Memory Application
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Produktnummer:
9783843377478
The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.
| Autor: | Choi, Sung-Jin Choi, Yang-Kyu |
|---|---|
| EAN: | 9783843377478 |
| Sprache: | Englisch |
| Seitenzahl: | 100 |
| Produktart: | kartoniert, broschiert |
| Verlag: | LAP Lambert Academic Publishing |
| Untertitel: | Schottky-Barrier Flash Memory |
| Schlagworte: | MOSFET (MOS-Feldeffekt-Transistor) |
